Which of the following is/are true for Dynamic RAM (DRAM)? A. It is slower…

Correct statements for Dynamic RAM (DRAM):

• It is slower than static RAM (SRAM). Reason: DRAM stores each bit as charge on a capacitor and requires sensing and restore operations; accessing and refresh overhead make it slower than SRAM, which uses bistable transistor circuits.

• Packing density is higher than static RAM (SRAM). Reason: A DRAM cell typically uses one transistor and one capacitor, allowing more cells per area compared with SRAM cells that require multiple transistors per bit.

• It requires data refreshing. Reason: The capacitor storing each bit slowly leaks charge, so periodic refresh cycles are needed to maintain the stored data.

Incorrect statement:

The statement that DRAM is faster than static RAM (SRAM) is false for the reasons given above.

Final answer: The true statements are: it is slower than SRAM; packing density is higher than SRAM; and it requires data refreshing.